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| 2MBI 50P-140 IGBT MODULE ( P-Series ) n Features * Square SC SOA at 10 x IC * Simplified Parallel Connection * Narrow Distribution of Characteristics * High Short Circuit Withstand-Capability 2-Pack IGBT 1400V 50A n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES Continuous TC=25C IC Continuous TC=80C 1ms TC=25C IC PULSE 1ms TC=80C -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1400 20 75 50 150 100 50 100 400 +150 -40 +125 2500 3.5 3.5 Units V V n Equivalent Circuit Collector Current A Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque W C C V Nm Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1400V VCE=0V VGE= 20V VGE=20V IC=50mA Tj= 25C VGE=15V IC=50A Tj=125C VGE=15V IC=50A VGE=0V VCE=10V f=1MHz VCC=600V IC=50A VGE= 15V RG=2,4 IF=50A VGE=0V IF=50A Min. Typ. Max. 1.0 200 9.0 3.0 Units mA A V V pF 1.2 0.6 1.0 0.3 3.3 350 6.0 8.0 2.7 3.3 5000 750 330 s V ns 2.4 * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.31 0.66 Units C/W 0.05 2MBI 50P-140 Collector Current vs. Collector-Emitter Voltage 125 T j= 2 5 C 125 T j= 1 2 5 C V GE= 2 0 V 1 5 V 12V 75 C 2-Pack IGBT 1400V 50A Collector Current vs. Collector-Emitter Voltage [A] Collector Current : I C Collector Current : I [A] 100 100 V G E= 2 0 V 1 5 V 75 12V 50 11V 50 11V 25 10V 0 0 1 2 3 4 5 Collector-Emitter Voltage : V CE [V] 6 25 10V 0 0 1 2 3 4 5 Collector-Emitter Voltage : V CE [V] 6 Collector-Emitter vs. Gate-Emitter Voltage T j= 2 5 C Collector-Emitter vs. Gate-Emitter Voltage T j= 1 2 5 C [V] CE CE [V] Collector Emitter Voltage : V 10 10 Collector Emitter Voltage : V 8 8 6 6 4 IC= 1 0 0 A 2 IC= 5 0 A IC= 2 5 A 0 0 5 10 15 20 Gate-Emitter Voltage : V G E [V] 25 4 IC= 1 0 0 A IC= 5 0 A 2 IC= 2 5 A 0 0 5 10 15 20 Gate-Emitter Voltage : V G E [V] 25 Switching Time vs. Collector Current V CC = 6 0 0 V , R G = 2 4 , V GE = 1 5 V , T j = 2 5 C Switching Time vs. Collector Current V CC =600V, V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] , t r, t off , t f [nsec] 1000 t on tr t off 1000 t on tr t off on Switching Time : t 100 tf Switching Time : t on 100 tf 10 0 25 50 75 100 125 Collector Current: I C (A) 10 0 25 50 75 100 125 Collector Current : I C [A] 2MBI 50P-140 Switching Time vs. R G V C C =600V, I C = 5 0 A , V G E= 1 5 V , T j = 2 5 C 10000 1000 ton GE 2-Pack IGBT 1400V 50A Collector Current vs. Collector-Emitter Voltage T j= 2 5 C 25 V CC =400, 600, 800V 20 Switching Time : t on t r, t off t f [nsec] , , 800 Collector-Emitter-Voltage : V 1000 t off 600 15 100 tf 400 10 200 5 10 10 100 Gate Resistance : R G [ ] 0 0 100 200 G a t e C h a r g e : Q g (nC) 300 0 400 Forward Voltage vs. Forward Current 125 V GE= 0 V 1000 Reverse Recovery Characteristics t rr , I rr vs. I F [A] 100 T j= 1 2 5 C rr 25C Reverse Recovery Current : I F Reverse Recovery Time : t rr [nsec] [A] Forward Current : I 75 t rr = 1 2 5 C t rr = 2 5 C 100 50 25 I rr = 1 2 5 C I rr = 2 5 C 10 0 0 1 2 Forward Voltage : V F [V] 3 4 0 25 50 75 100 125 Forward Current : I F [A] Reverse Biased Safe Operating Area Transient Thermal Resistance 600 + V G E =15V, -V G E 15V, T j 125C, R G 2 4 [C/W] 500 th(j-c) [A] 10 0 SCSOA 400 (non-repetitive pulse) FWD IGBT 10 -1 Thermal Resistance : R Collector Current : I C 300 200 100 RBSOA (Repetitive pulse) 10 -2 0 -3 10 10 -2 10 -1 10 0 0 200 400 600 800 1000 1200 1400 1600 Pulse Width : P W [sec] Collector-Emitter Voltage : V CE [V] Gate-Emitter Voltage : V GE [V] tr [V] 2MBI 50P-140 Switching Loss vs. Collector Current 40 V CC= 6 0 0 V , R G= 2 4 , V GE= 1 5 V 100 T j= 2 5 C 2-Pack IGBT 1400V 50A Capacitance vs. Collector-Emitter Voltage , E off , E rr [mJ/cycle] E on 1 2 5 C 30 E on 2 5 C 20 , C oes , C res [nF] 10 C ies on Switching Loss : E Capacitance: C ies E off 1 2 5 C 10 E rr 1 2 5 C E off 25C 0 0 25 E rr 50 75 100 Collector Current : I C [A] 25C 125 1 C oes C res 0,1 0 5 10 15 20 25 30 Collector Emitter Voltage : V CE [V] 35 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com |
Price & Availability of 2MBI50P-140
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